Driving circuit and control method thereof
According to the driving circuit and the control method thereof provided by the invention, the first time delay circuit, the first switch device and the first resistor are arranged, the first switch device is controlled to be closed under the condition that the driving signal of the driving signal i...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | According to the driving circuit and the control method thereof provided by the invention, the first time delay circuit, the first switch device and the first resistor are arranged, the first switch device is controlled to be closed under the condition that the driving signal of the driving signal input end is the turn-on driving signal, so that the turn-on resistor is connected with the first resistor in parallel, the size of the driving resistor is changed, and the driving stability of the driving circuit is improved. The power loss when the SiC MOSFET is turned on can be reduced.
本申请提供的一种驱动电路及其控制方法,通过设置第一延时电路、第一开关装置和第一电阻,在驱动信号输入端的驱动信号为开通驱动信号的情况下,控制第一开关装置闭合,使所述开通电阻与所述第一电阻并联,改变了驱动电阻的大小,能够减少SiC MOSFET开启时的功率损耗。 |
---|