Nonvolatile memory device

A non-volatile memory device includes a memory cell, a first regulator, a second regulator, a first switch, a second switch, and a capacitor coupling switch. The first regulator includes a first capacitor and generates a first voltage at a first node connected to a first subset of memory cells to pr...

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Bibliographische Detailangaben
Hauptverfasser: PASSERINI MARCO, BELLOTTI GIOVANNI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A non-volatile memory device includes a memory cell, a first regulator, a second regulator, a first switch, a second switch, and a capacitor coupling switch. The first regulator includes a first capacitor and generates a first voltage at a first node connected to a first subset of memory cells to provide the first voltage to the first subset. The second regulator includes a second capacitor and generates a second voltage at a second node. The first switch selectively couples the second node to a second subset of memory cells to provide a second voltage to the second subset. A second switch selectively couples the first node to the second subset to also provide the first voltage to the second subset. The capacitor coupling switch selectively couples the second capacitor in parallel to the first capacitor when the first switch is deactivated and the second switch is activated. 本公开涉及一种非易失性存储器装置,包括存储器单元、第一调节器、第二调节器、第一开关、第二开关和电容器耦合开关。第一调节器包括第一电容器,并且在连接到存储器单元第一子集的第一节点处生成第一电压,以将第一电压提供给第一子集。第二调节器包括第二电容器,并且在第二节点处生成第二电