Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction
The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHEN LEI CHEN DENG JI YALING SONG JINLIN HONG HANYU YAO ZHENJIAN ZHANG LIANGCHUN |
| description | The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black phosphorus layers, and by changing the electron doping of black phosphorus and the number of layers of the hexagonal boron nitride-black phosphorus multilayer heterojunction, the near-field thermal radiation can be modulated. The hyperbolic mode of the hexagonal boron nitride and the plasma frequency on the surface of the black phosphorus are coupled and decoupled, so that the coupling of evanescent waves between the hexagonal boron nitride-black phosphorus multilayer heterojunction is correspondingly changed, and the modulation of near-field thermal radiation of an infrared band is realized. According to the near-field thermal radiation modulation method based on the hexagonal boron nitride-black phosphorus multil |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116224626A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116224626A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116224626A3</originalsourceid><addsrcrecordid>eNqNjLEOwjAQQ7swIOAfwgdkaEHdUQVi6sReXZsrCaS56nKRgK8nSP0ABst-ku118WkRWI8OvVFikSfwisE4EEdBTWSSXyKKJaN6iGhUZosvuFPI9Z44c3DCzqDuPQxPNVuKWZyimpIX5-GNnDeCTI8Uht_ltliN4CPuFt8U-8v51lw1ztRhnGHAgNI1bVnWVXWsq_p0-KfzBe2_SFk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction</title><source>esp@cenet</source><creator>CHEN LEI ; CHEN DENG ; JI YALING ; SONG JINLIN ; HONG HANYU ; YAO ZHENJIAN ; ZHANG LIANGCHUN</creator><creatorcontrib>CHEN LEI ; CHEN DENG ; JI YALING ; SONG JINLIN ; HONG HANYU ; YAO ZHENJIAN ; ZHANG LIANGCHUN</creatorcontrib><description>The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black phosphorus layers, and by changing the electron doping of black phosphorus and the number of layers of the hexagonal boron nitride-black phosphorus multilayer heterojunction, the near-field thermal radiation can be modulated. The hyperbolic mode of the hexagonal boron nitride and the plasma frequency on the surface of the black phosphorus are coupled and decoupled, so that the coupling of evanescent waves between the hexagonal boron nitride-black phosphorus multilayer heterojunction is correspondingly changed, and the modulation of near-field thermal radiation of an infrared band is realized. According to the near-field thermal radiation modulation method based on the hexagonal boron nitride-black phosphorus multil</description><language>chi ; eng</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230606&DB=EPODOC&CC=CN&NR=116224626A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230606&DB=EPODOC&CC=CN&NR=116224626A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN LEI</creatorcontrib><creatorcontrib>CHEN DENG</creatorcontrib><creatorcontrib>JI YALING</creatorcontrib><creatorcontrib>SONG JINLIN</creatorcontrib><creatorcontrib>HONG HANYU</creatorcontrib><creatorcontrib>YAO ZHENJIAN</creatorcontrib><creatorcontrib>ZHANG LIANGCHUN</creatorcontrib><title>Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction</title><description>The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black phosphorus layers, and by changing the electron doping of black phosphorus and the number of layers of the hexagonal boron nitride-black phosphorus multilayer heterojunction, the near-field thermal radiation can be modulated. The hyperbolic mode of the hexagonal boron nitride and the plasma frequency on the surface of the black phosphorus are coupled and decoupled, so that the coupling of evanescent waves between the hexagonal boron nitride-black phosphorus multilayer heterojunction is correspondingly changed, and the modulation of near-field thermal radiation of an infrared band is realized. According to the near-field thermal radiation modulation method based on the hexagonal boron nitride-black phosphorus multil</description><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEOwjAQQ7swIOAfwgdkaEHdUQVi6sReXZsrCaS56nKRgK8nSP0ABst-ku118WkRWI8OvVFikSfwisE4EEdBTWSSXyKKJaN6iGhUZosvuFPI9Z44c3DCzqDuPQxPNVuKWZyimpIX5-GNnDeCTI8Uht_ltliN4CPuFt8U-8v51lw1ztRhnGHAgNI1bVnWVXWsq_p0-KfzBe2_SFk</recordid><startdate>20230606</startdate><enddate>20230606</enddate><creator>CHEN LEI</creator><creator>CHEN DENG</creator><creator>JI YALING</creator><creator>SONG JINLIN</creator><creator>HONG HANYU</creator><creator>YAO ZHENJIAN</creator><creator>ZHANG LIANGCHUN</creator><scope>EVB</scope></search><sort><creationdate>20230606</creationdate><title>Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction</title><author>CHEN LEI ; CHEN DENG ; JI YALING ; SONG JINLIN ; HONG HANYU ; YAO ZHENJIAN ; ZHANG LIANGCHUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116224626A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN LEI</creatorcontrib><creatorcontrib>CHEN DENG</creatorcontrib><creatorcontrib>JI YALING</creatorcontrib><creatorcontrib>SONG JINLIN</creatorcontrib><creatorcontrib>HONG HANYU</creatorcontrib><creatorcontrib>YAO ZHENJIAN</creatorcontrib><creatorcontrib>ZHANG LIANGCHUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN LEI</au><au>CHEN DENG</au><au>JI YALING</au><au>SONG JINLIN</au><au>HONG HANYU</au><au>YAO ZHENJIAN</au><au>ZHANG LIANGCHUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction</title><date>2023-06-06</date><risdate>2023</risdate><abstract>The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black phosphorus layers, and by changing the electron doping of black phosphorus and the number of layers of the hexagonal boron nitride-black phosphorus multilayer heterojunction, the near-field thermal radiation can be modulated. The hyperbolic mode of the hexagonal boron nitride and the plasma frequency on the surface of the black phosphorus are coupled and decoupled, so that the coupling of evanescent waves between the hexagonal boron nitride-black phosphorus multilayer heterojunction is correspondingly changed, and the modulation of near-field thermal radiation of an infrared band is realized. According to the near-field thermal radiation modulation method based on the hexagonal boron nitride-black phosphorus multil</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN116224626A |
| source | esp@cenet |
| subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T01%3A01%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN%20LEI&rft.date=2023-06-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116224626A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |