Near-field thermal radiation modulation method based on hexagonal boron nitride-black phosphorus multilayer heterojunction

The invention relates to a near-field thermal radiation modulation method based on a hexagonal boron nitride-black phosphorus multilayer heterojunction, the structure is a parallel and symmetrical flat plate structure, the flat plate is formed by alternating hexagonal boron nitride layers and black phosphorus layers, and by changing the electron doping of black phosphorus and the number of layers of the hexagonal boron nitride-black phosphorus multilayer heterojunction, the near-field thermal radiation can be modulated. The hyperbolic mode of the hexagonal boron nitride and the plasma frequency on the surface of the black phosphorus are coupled and decoupled, so that the coupling of evanescent waves between the hexagonal boron nitride-black phosphorus multilayer heterojunction is correspondingly changed, and the modulation of near-field thermal radiation of an infrared band is realized. According to the near-field thermal radiation modulation method based on the hexagonal boron nitride-black phosphorus multil