Atomic layer deposition method

The invention discloses an atomic layer deposition method, which comprises the following steps of: providing ionized fluorine ions in a reaction cavity; introducing silane, nitric oxide and inert gas into the reaction cavity; applying a radio frequency sputtering method in the reaction cavity to generate a film with an expected thickness on the inner surface of the reaction cavity; loading a wafer into the reaction chamber; and generating a thin film with a target thickness on the surface of the wafer by using an atomic layer deposition method. According to the atomic layer deposition method disclosed by the invention, the atomic layer deposition process time or the production cost can be reduced. 本发明公开一种原子层沉积方法，包含：提供离子化氟离子于一反应腔中；向所述反应腔导入硅烷、一氧化氮与惰性气体；对所述反应腔内施加一射频溅镀手段，以在该反应腔的内部表面生成一期望厚度的薄膜；载入一晶圆至该反应腔中；利用一原子层沉积手段在所述晶圆之表面生成一目标厚度的薄膜。本发明公开之原子层沉积方法可减少原子层沉积流程时间或者减少生产成本。