Indium zinc oxide target material and preparation method thereof

The invention belongs to the technical field of IZO target materials, and discloses an indium-zinc oxide target material and a preparation method thereof.The indium-zinc oxide target material is composed of indium oxide and zinc oxide, the atomic ratio of Zn to In in the target material is Zn/(Zn +...

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Bibliographische Detailangaben
Hauptverfasser: WANG QIFENG, SHAO XUELIANG, ZHANG XINGYU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the technical field of IZO target materials, and discloses an indium-zinc oxide target material and a preparation method thereof.The indium-zinc oxide target material is composed of indium oxide and zinc oxide, the atomic ratio of Zn to In in the target material is Zn/(Zn + In) = 0.1%-4%, indium oxide is composed of large-particle-size indium oxide powder and small-particle-size indium oxide powder, and the particle size of the indium oxide powder is smaller than that of the zinc oxide powder. The particle size D50 of the large-particle-size indium oxide is 1-2 microns, the particle size D90 of the large-particle-size indium oxide is 1-1.8 microns, the particle size D50 of the small-particle-size indium oxide is 0.1-0.3 microns, and the particle size D90 of the small-particle-size indium oxide is 0.1-0.2 microns. The indium zinc oxide target material has relatively low resistivity and relatively high conductivity, and the film-forming characteristic of the IZO target material is impro