Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material
The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps...
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| creator | DANG LEYANG WANG GUIGEN SONG TAO CUI TIANHAO |
| description | The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps: S1, dissolving ammonium bismuth citrate, selenite and tellurite in an inorganic alkali aqueous solution, heating and preserving heat to obtain a mixture 1; s2, removing supernatant liquid of the mixture 1, shaking lower liquid of the mixture 1, transferring the nanosheets to a centrifugal tube after the nanosheets are suspended, centrifuging, collecting precipitates, and drying to obtain the tellurium-doped selenium bismuth oxide two-dimensional material. The hydrothermal method which is low in energy consumption and simple to operate is adopted, compared with a common chemical vapor deposition method for synthesizing a two-dimensional material, the cost of required equipment of the hydrothermal method is lower, |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116216654A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116216654A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116216654A3</originalsourceid><addsrcrecordid>eNqNi0sKwkAQRLNxIeod2gPMIn6yl6C4EhfuQ5upkIGeDzMd9PgG9AAuiuIVr5YV7hmJM6uLgTx0jJY4zElJXP-d40AKkSm7yRsbEywVCMKM9HTFTzpSfDsL0lc01nmEMv9YyLMiO5Z1tRhYCja_XlXby_nRXg1S7FAS9wjQrr3VdbOrm-Z4OO3_cT6pFEAq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material</title><source>esp@cenet</source><creator>DANG LEYANG ; WANG GUIGEN ; SONG TAO ; CUI TIANHAO</creator><creatorcontrib>DANG LEYANG ; WANG GUIGEN ; SONG TAO ; CUI TIANHAO</creatorcontrib><description>The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps: S1, dissolving ammonium bismuth citrate, selenite and tellurite in an inorganic alkali aqueous solution, heating and preserving heat to obtain a mixture 1; s2, removing supernatant liquid of the mixture 1, shaking lower liquid of the mixture 1, transferring the nanosheets to a centrifugal tube after the nanosheets are suspended, centrifuging, collecting precipitates, and drying to obtain the tellurium-doped selenium bismuth oxide two-dimensional material. The hydrothermal method which is low in energy consumption and simple to operate is adopted, compared with a common chemical vapor deposition method for synthesizing a two-dimensional material, the cost of required equipment of the hydrothermal method is lower,</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230606&DB=EPODOC&CC=CN&NR=116216654A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230606&DB=EPODOC&CC=CN&NR=116216654A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DANG LEYANG</creatorcontrib><creatorcontrib>WANG GUIGEN</creatorcontrib><creatorcontrib>SONG TAO</creatorcontrib><creatorcontrib>CUI TIANHAO</creatorcontrib><title>Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material</title><description>The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps: S1, dissolving ammonium bismuth citrate, selenite and tellurite in an inorganic alkali aqueous solution, heating and preserving heat to obtain a mixture 1; s2, removing supernatant liquid of the mixture 1, shaking lower liquid of the mixture 1, transferring the nanosheets to a centrifugal tube after the nanosheets are suspended, centrifuging, collecting precipitates, and drying to obtain the tellurium-doped selenium bismuth oxide two-dimensional material. The hydrothermal method which is low in energy consumption and simple to operate is adopted, compared with a common chemical vapor deposition method for synthesizing a two-dimensional material, the cost of required equipment of the hydrothermal method is lower,</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0sKwkAQRLNxIeod2gPMIn6yl6C4EhfuQ5upkIGeDzMd9PgG9AAuiuIVr5YV7hmJM6uLgTx0jJY4zElJXP-d40AKkSm7yRsbEywVCMKM9HTFTzpSfDsL0lc01nmEMv9YyLMiO5Z1tRhYCja_XlXby_nRXg1S7FAS9wjQrr3VdbOrm-Z4OO3_cT6pFEAq</recordid><startdate>20230606</startdate><enddate>20230606</enddate><creator>DANG LEYANG</creator><creator>WANG GUIGEN</creator><creator>SONG TAO</creator><creator>CUI TIANHAO</creator><scope>EVB</scope></search><sort><creationdate>20230606</creationdate><title>Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material</title><author>DANG LEYANG ; WANG GUIGEN ; SONG TAO ; CUI TIANHAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116216654A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>DANG LEYANG</creatorcontrib><creatorcontrib>WANG GUIGEN</creatorcontrib><creatorcontrib>SONG TAO</creatorcontrib><creatorcontrib>CUI TIANHAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DANG LEYANG</au><au>WANG GUIGEN</au><au>SONG TAO</au><au>CUI TIANHAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material</title><date>2023-06-06</date><risdate>2023</risdate><abstract>The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps: S1, dissolving ammonium bismuth citrate, selenite and tellurite in an inorganic alkali aqueous solution, heating and preserving heat to obtain a mixture 1; s2, removing supernatant liquid of the mixture 1, shaking lower liquid of the mixture 1, transferring the nanosheets to a centrifugal tube after the nanosheets are suspended, centrifuging, collecting precipitates, and drying to obtain the tellurium-doped selenium bismuth oxide two-dimensional material. The hydrothermal method which is low in energy consumption and simple to operate is adopted, compared with a common chemical vapor deposition method for synthesizing a two-dimensional material, the cost of required equipment of the hydrothermal method is lower,</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material |
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