Preparation method and application of tellurium-doped selenium bismuth oxide two-dimensional material

The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps...

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Hauptverfasser: DANG LEYANG, WANG GUIGEN, SONG TAO, CUI TIANHAO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to the technical field of preparation of two-dimensional materials (IPC classification number is H01L31/032), in particular to a preparation method and application of a tellurium-doped selenium bismuth oxide two-dimensional material, and the method comprises the following steps: S1, dissolving ammonium bismuth citrate, selenite and tellurite in an inorganic alkali aqueous solution, heating and preserving heat to obtain a mixture 1; s2, removing supernatant liquid of the mixture 1, shaking lower liquid of the mixture 1, transferring the nanosheets to a centrifugal tube after the nanosheets are suspended, centrifuging, collecting precipitates, and drying to obtain the tellurium-doped selenium bismuth oxide two-dimensional material. The hydrothermal method which is low in energy consumption and simple to operate is adopted, compared with a common chemical vapor deposition method for synthesizing a two-dimensional material, the cost of required equipment of the hydrothermal method is lower,