Breaking method for reducing bottom oxidation of monocrystalline silicon based on czochralski method

The invention discloses a breaking method for reducing bottom oxidation of monocrystalline silicon based on a czochralski method, which comprises the steps of charging, melting, seeding, shouldering, equal-diameter operation, ending and furnace shutdown, and when breaking occurs in the equal-diameter operation, the breaking method comprises the following steps: S1, opening the pump opening of a vacuum pump to 100% for crystal pulling; s2, on the basis of the step S1, the flow of argon is set to be 120 sL/min or above; s3, on the basis of the step S2, the position of the crucible is lowered at the speed of 10-160 mm/min; s4, on the basis of the step S3, the flow of argon is set to be 100 sL/min; s5, on the basis of the step S4, the speed of lowering the position of the crucible is set to be 280 mm/min; and S6, finishing and blowing out the furnace after the extraction breaking is completed. According to the method, the sequence of the breaking method is improved, the crystal pulling speed and the breaking spee