Semiconductor laser element with spin-orbit coupling layer

The invention provides a semiconductor laser element provided with a spin-orbit coupling layer, which relates to the technical field of semiconductor photoelectric devices and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, spin-orbit coupling layers are arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the spin-orbit coupling layer is any one of Ta7S12, CoF2O4, FeF2, MoS2, Mo2TiAlC2 and CrTiAlC2 or any combination of the Ta7S12, the CoF2O4, the FeF2, the MoS2, the Mo2TiAlC2 and the CrTiAlC2; the spin-orbit coupling layer has relatively high net spin density and super-strong second-order nonlinear Hall effect, enhances nonlinear optical polarizability, reduces internal optical loss, light field dissipation and light field mode leakage, improves coherence and mode gain of laser, forms