GaN-based high electron mobility transistor with improved radiation resistance and hydrogen resistance

The invention provides a GaN-based high-electron-mobility transistor capable of improving radiation resistance and hydrogen resistance and a preparation method. The GaN-based high-electron-mobility transistor comprises a substrate (1), a nucleating layer (2), a buffer layer (3), a channel layer (4), a barrier layer (5) and a dielectric layer (6) which are sequentially stacked, a source electrode (7) and a drain electrode (8) which clamp the dielectric layer (6) are arranged on the barrier layer (5), and a grid electrode (9) is arranged on the dielectric layer (6); wherein the dielectric layer (6) comprises a first dielectric layer (61) and a second dielectric layer (62) which are stacked, the first dielectric layer (61) is made of a nitride material, and the second dielectric layer (62) is made of a high-k dielectric material. 本公开提供一种提高抗辐照能力和耐氢特性的GaN基高电子迁移率晶体管及制备方法，高电子迁移率晶体管包括：依次叠设的衬底(1)、成核层(2)、缓冲层(3)、沟道层(4)、势垒层(5)及介质层(6)；所述势垒层(5)上设有夹着所述介质层(6)的源极(7)及漏极(8)，所述介质层(6)上设有栅极(9)；其中，所述介质层(6)包括叠设的第一介质层(61)与第二介质层(62)，所