Cascaded GaN power device packaging structure

The invention discloses a cascaded GaN power device packaging structure, which is characterized in that an AIN layer is provided with a cavity, an HEMT chip is located in the cavity of the AIN layer and is right arranged on the upper surface of a frame base island, an MOSFET chip is located on the u...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	QIU YINGNING, FENG YANHUI, YUE CHUNXIAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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