Method for improving power capacity of thick film integrated radio frequency device and radio frequency device

The invention discloses a method for improving the power capacity of a thick film integrated radio frequency device and a radio frequency device, and the method comprises the steps: providing at least three ceramic substrates, processing a metal thin layer and a conductor layer on the bottom surface of the first ceramic substrate, processing a thickened conductor layer on the top surface of the first ceramic substrate, and arranging a high-power device and a low-power device on the thickened conductor layer, a thin film dielectric layer is printed on the high-power device through a thin film process, and conductor layers are processed on the bottom surfaces of the rest ceramic substrates; high-power grounding holes and low-power grounding holes are formed in the corresponding ceramic substrates, a plurality of heat dissipation holes are formed in all the ceramic substrates, and the heat dissipation holes are distributed in the peripheral side of the thin film dielectric layer; the radiating fins are arranged