Manufacturing method for improving single-particle burning resistance of trench type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

The invention discloses a manufacturing method for improving single event burnout resistance of a trench-type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and belongs to the field of semiconductor power devices. In an anti-radiation trench type MOSFET structure, cellular region deep hole contact is manufactured, P-type impurities are injected into the bottom of a deep hole, holes are better collected in a single-particle event, and the single-particle burnout resistance of a device is enhanced. According to the invention, by adding a part of process steps and modifying a part of process flow processing sequence without adding additional photoetching layers, under the condition that the process difficulty and the manufacturing cost are increased in a limited manner, the single event burnout resistance of the product can be effectively improved, the product performance is improved, and the method is better suitable for the space navigation environment. According to the method provided by the inve