Memristor array operational circuit

The invention provides a memristor array operational circuit, comprising: a basic storage module comprising a plurality of basic storage units, each basic storage unit comprising a first memristor and a first transistor connected with each other; the preprocessing module comprises a plurality of com...

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Bibliographische Detailangaben
Hauptverfasser: BIAN YI, CHEN GANG, LI ZHIGANG, QIAO RUIXIU, LU HUAXIANG, KONG XIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a memristor array operational circuit, comprising: a basic storage module comprising a plurality of basic storage units, each basic storage unit comprising a first memristor and a first transistor connected with each other; the preprocessing module comprises a plurality of common-gate amplifiers, the common-gate amplifiers are connected with the first transistor, and output currents of the common-gate amplifiers are gathered and output; the bias module is used for providing bias voltage for the preprocessing module; wherein the first transistor is used for receiving control information, and the preprocessing module is used for reading output current of the basic storage unit to obtain resistance information of the first memristor; and the control information and the resistance information are multiplied and accumulated in the preprocessing module. According to the memristor array operation circuit, the resistance value difference between the high resistance state and the low resistance