Light guide device preparation method based on large tape-out process

The invention relates to a light guide device preparation method based on a large tape-out process, and belongs to the technical field of infrared photoelectric detectors. According to the method, the surface of one side of a raw material sheet is sequentially machined as follows: thinning polishing, anodic oxidation and passivation, and a double-layer film material sheet with an anodic oxidation film and a passivation film growing on the surface is obtained; bonding one side of the passivation film of the double-layer film material sheet on the substrate for sheet bonding; and sequentially processing the surface of the other side as follows: thinning and polishing, corroding, anodizing, passivating, photoetching and forming, etching, metallizing and scribing to obtain the photoconductive device. Compared with the prior art that scribing is carried out according to the photosensitive area after the single face of the raw material piece is thinned and polished, the method has the advantages that other steps ar