GaN drive circuit

The GaN driving circuit comprises a power management chip, a high-side phase inverter, a low-side phase inverter, a gallium nitride high-side switch and a gallium nitride low-side switch, wherein the gallium nitride high-side switch and the gallium nitride low-side switch are connected to a switch node; pWM is realized in a power management chip software mode, an output high-side PWM signal and an output low-side PWM signal are controlled through a preset fixed frequency, then a high-side inverter and a low-side inverter are controlled to selectively drive a GaN HEMT 1 or a GaN HEMT 2 to be switched on or switched off, current flowing through a switch node is converted, and therefore expected output voltage is provided at the half-bridge midpoint. A high-side GaN HEMT switch and a low-side GaN HEMT switch are switched on at the same time, a NOR gate inverter is selected as the low-side inverter, and when a low-side PWM signal provided by the power management chip and a level signal sent by the high-side inver