High-efficiency all-solid-state mid-infrared 2-micron and 4-micron dual-wavelength continuous laser
The invention relates to a semiconductor laser based on a linear method, in particular to a high-efficiency all-solid-state mid-infrared 2 [mu] m and 4 [mu] m dual-wavelength continuous laser which is used for solving the problem that a 1.15 [mu] m laser is used for pumping a holmium-doped crystal t...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a semiconductor laser based on a linear method, in particular to a high-efficiency all-solid-state mid-infrared 2 [mu] m and 4 [mu] m dual-wavelength continuous laser which is used for solving the problem that a 1.15 [mu] m laser is used for pumping a holmium-doped crystal to obtain 2 [mu] m waveband solid continuous laser output; and the iron-doped zinc selenide crystal is pumped by using 3-micron-band continuous laser to obtain 4-micron-band solid continuous laser output, but the laser can only obtain 2-micron or 4-micron-band single wavelength output. The high-efficiency all-solid-state mid-infrared 2 [mu] m and 4 [mu] m dual-wavelength continuous laser comprises a resonant cavity, a cryostat, a pump laser, a collimation focusing system and a laser gain medium. According to the holmium-iron co-doped crystal, the high-power 1-micron-waveband laser pumping holmium-iron co-doped crystal is used for achieving simultaneous output of lasers with the two wavelengths of 2 microns and 4 mic |
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