Semiconductor device with mixed channel structure

A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one first channel structure and a second channel structure, the at least one first channel structure extending parallel to an upper surface of the substrate in a first direction and a second direction without directly contacting the substrate, the second channel structure is connected to the at least one first channel structure in a third direction perpendicular to the first direction or the second direction and intersects with the at least one first channel structure; a gate structure surrounding the mixed channel structure; and source/drain regions formed at opposite ends of the at least one mixed channel structure in the first direction, respectively. 一种半导体器件包括：衬底；至少一个混合沟道结构，形成在衬底上并包括至少一个第一沟道结构和第二沟道结构，至少一个第一沟道结构在第一方向和第二方向上平行于衬底的上表面延伸而不直接接触衬底，第二沟道结构在垂直于第一方向或第二方向的第三方向上连接到至少一个第一沟道结构并与至少一个第一沟道结构相交；围绕混合沟道结构的栅极结构；以及源极/漏极区，分别形成在至少一个混合沟道结构的沿第一方向的相反两端。