Compositions and methods of use thereof
The present disclosure relates to a composition comprising at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low k removal rate inhibitor; and an aqueous solvent. 本公开有关于一种组成物，其包括至少一种第一钌去除率增强剂；至少一种铜去除率抑制剂；至少一种低k去除率抑制剂；及一水性溶剂。...
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| creator | LIANG YANNAN PIAO HONG HUANG TINGKAI HU BIN |
| description | The present disclosure relates to a composition comprising at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low k removal rate inhibitor; and an aqueous solvent.
本公开有关于一种组成物，其包括至少一种第一钌去除率增强剂；至少一种铜去除率抑制剂；至少一种低k去除率抑制剂；及一水性溶剂。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116134589A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116134589A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116134589A3</originalsourceid><addsrcrecordid>eNrjZFB3zs8tyC_OLMnMzytWSMxLUchNLcnITylWyE9TKC1OVSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmaGxiamFpaOxsSoAQClEif3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Compositions and methods of use thereof</title><source>esp@cenet</source><creator>LIANG YANNAN ; PIAO HONG ; HUANG TINGKAI ; HU BIN</creator><creatorcontrib>LIANG YANNAN ; PIAO HONG ; HUANG TINGKAI ; HU BIN</creatorcontrib><description>The present disclosure relates to a composition comprising at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low k removal rate inhibitor; and an aqueous solvent.
本公开有关于一种组成物，其包括至少一种第一钌去除率增强剂；至少一种铜去除率抑制剂；至少一种低k去除率抑制剂；及一水性溶剂。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=CN&NR=116134589A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=CN&NR=116134589A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG YANNAN</creatorcontrib><creatorcontrib>PIAO HONG</creatorcontrib><creatorcontrib>HUANG TINGKAI</creatorcontrib><creatorcontrib>HU BIN</creatorcontrib><title>Compositions and methods of use thereof</title><description>The present disclosure relates to a composition comprising at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low k removal rate inhibitor; and an aqueous solvent.
本公开有关于一种组成物，其包括至少一种第一钌去除率增强剂；至少一种铜去除率抑制剂；至少一种低k去除率抑制剂；及一水性溶剂。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB3zs8tyC_OLMnMzytWSMxLUchNLcnITylWyE9TKC1OVSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmaGxiamFpaOxsSoAQClEif3</recordid><startdate>20230516</startdate><enddate>20230516</enddate><creator>LIANG YANNAN</creator><creator>PIAO HONG</creator><creator>HUANG TINGKAI</creator><creator>HU BIN</creator><scope>EVB</scope></search><sort><creationdate>20230516</creationdate><title>Compositions and methods of use thereof</title><author>LIANG YANNAN ; PIAO HONG ; HUANG TINGKAI ; HU BIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116134589A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIANG YANNAN</creatorcontrib><creatorcontrib>PIAO HONG</creatorcontrib><creatorcontrib>HUANG TINGKAI</creatorcontrib><creatorcontrib>HU BIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIANG YANNAN</au><au>PIAO HONG</au><au>HUANG TINGKAI</au><au>HU BIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Compositions and methods of use thereof</title><date>2023-05-16</date><risdate>2023</risdate><abstract>The present disclosure relates to a composition comprising at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low k removal rate inhibitor; and an aqueous solvent.
本公开有关于一种组成物，其包括至少一种第一钌去除率增强剂；至少一种铜去除率抑制剂；至少一种低k去除率抑制剂；及一水性溶剂。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Compositions and methods of use thereof |
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