Electrooxidized metal removal with particle contamination mitigation in semiconductor processing

During electrooxidized metal removal on a semiconductor substrate, an anodic bias is applied to a substrate having a metal layer, and the metal is electrochemically dissolved in an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) may be unintentionally formed...

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Bibliographische Detailangaben
Hauptverfasser: BUCKALEW BRYAN L, MAYER STEVEN T, BANIK STEPHEN J II, THORKELSSON KARI
Format: Patent
Sprache:chi ; eng
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