Electrooxidized metal removal with particle contamination mitigation in semiconductor processing

During electrooxidized metal removal on a semiconductor substrate, an anodic bias is applied to a substrate having a metal layer, and the metal is electrochemically dissolved in an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) may be unintentionally formed on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. The contamination of such particles may be mitigated by preventing the formation of the particles and/or by dissolving the particles. In an implementation, mitigation involves the use of an electrolyte comprising an oxidizing agent (e.g., hydrogen peroxide) during electrochemical metal removal. In one embodiment, an electrochemical metal removal apparatus has a conduit for introducing an oxidant into an electrolyte and a sensor for monitoring the concentration of the oxidant in the electrolyte. 在半导体衬底上的电氧化金属移除期间，对具有金属层的衬底施加阳极偏置，并且金属被电化学溶解于电解液中。金属颗粒(例如，当溶解的金属是铜时为铜颗粒)可能在电化学金属移除期间无意中形成于衬底的