Stacked memory structure with dual-channel transistor

A memory structure includes a spacer between a first side of a word line conductor and a bit line conductor. A semiconductor material has horizontal portions extending from the bit line conductor along a top and a bottom of the word line conductor and a contact portion extending along a second side of the word line conductor between the horizontal portions and connecting the horizontal portions. A high kappa dielectric is between the semiconductor material and the word line conductor. A capacitor has a first conductor contacting a contact portion of the semiconductor material along a first side of the word line conductor, a second conductor connected to a ground terminal, and an insulator between the first conductor and the second conductor. 一种存储器结构包括字线导体的第一侧和位线导体之间的间隔体。半导体材料具有水平部分和接触部分，所述水平部分沿着字线导体的顶部和底部从所述位线导体延伸，所述接触部分在所述水平部分之间沿着所述字线导体的第二侧延伸并且连接所述水平部分。高κ电介质在所述半导体材料和所述字线导体之间。电容器具有第一导体、第二导体以及所述第一导体和所述第二导体之间的绝缘体，其中，所述第一导体沿着所述字线导体的第一侧接触所述半导体材料的接触部分，所述第二导体连接到接地端子。