Low-power GaN laser diode and manufacturing method thereof

The invention provides a low-power GaN laser diode and a manufacturing method thereof, belongs to the technical field of laser diodes, and is used for solving the technical problems of high manufacturing difficulty and high cost of a middle ridge of an existing laser diode. According to the low-power GaN laser diode, a composite structure of the ITO ohmic contact layer and the Pd metal covering layer is arranged on the epitaxial layer, so that the thickness of the epitaxial covering layer is reduced, and the cost is reduced; iTO is adopted as the ohmic contact layer, the Pd metal covering layer is matched to serve as a photoetching mask plate, the right-angle faces on the two sides of the ridge structure are formed by combining a larger ITO lateral etching angle with a Pd mask, good ohmic contact and the ridge structure close to the vertical angle can be formed, the good optical limiting effect is achieved, and the product performance is improved; and the right-angle groove structure is arranged at the ohmic