P-type heat treatment method of tellurium-cadmium-mercury material

The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried ou...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANG CHAOCHEN, HUANG LI, ZHOU WENHONG, HUANG SHENG, LIU YONGFENG, ZHANG BINGJIE
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YANG CHAOCHEN
HUANG LI
ZHOU WENHONG
HUANG SHENG
LIU YONGFENG
ZHANG BINGJIE
description The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried out on the tellurium-cadmium-mercury material obtained through epitaxial growth, the time of mercury-rich heat treatment is determined according to the thickness of the tellurium-cadmium-mercury material, and the temperature of heat treatment and the temperature and time of vacuum annealing treatment are controlled at the same time; the technical problem that the electrical parameters of the mercury-cadmium-telluride P-type material after mercury-rich heat treatment are unstable can be solved, meanwhile, the carrier concentration of the mercury-cadmium-telluride P-type material at the liquid nitrogen temperature can be accurately controlled within a certain temperature range, good batch stability is achieved, the yie
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116121874A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116121874A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116121874A3</originalsourceid><addsrcrecordid>eNrjZHAK0C2pLEhVyEhNLFEoKQKSual5JQq5qSUZ-SkK-WkKJak5OaVFmaW5usmJKbkgOje1KLm0qFIhN7EktSgzMYeHgTUtMac4lRdKczMourmGOHvophbkx6cWFyQmp-allsQ7-xkamhkaGVqYmzgaE6MGAFy6MmU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>P-type heat treatment method of tellurium-cadmium-mercury material</title><source>esp@cenet</source><creator>YANG CHAOCHEN ; HUANG LI ; ZHOU WENHONG ; HUANG SHENG ; LIU YONGFENG ; ZHANG BINGJIE</creator><creatorcontrib>YANG CHAOCHEN ; HUANG LI ; ZHOU WENHONG ; HUANG SHENG ; LIU YONGFENG ; ZHANG BINGJIE</creatorcontrib><description>The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried out on the tellurium-cadmium-mercury material obtained through epitaxial growth, the time of mercury-rich heat treatment is determined according to the thickness of the tellurium-cadmium-mercury material, and the temperature of heat treatment and the temperature and time of vacuum annealing treatment are controlled at the same time; the technical problem that the electrical parameters of the mercury-cadmium-telluride P-type material after mercury-rich heat treatment are unstable can be solved, meanwhile, the carrier concentration of the mercury-cadmium-telluride P-type material at the liquid nitrogen temperature can be accurately controlled within a certain temperature range, good batch stability is achieved, the yie</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230516&amp;DB=EPODOC&amp;CC=CN&amp;NR=116121874A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230516&amp;DB=EPODOC&amp;CC=CN&amp;NR=116121874A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANG CHAOCHEN</creatorcontrib><creatorcontrib>HUANG LI</creatorcontrib><creatorcontrib>ZHOU WENHONG</creatorcontrib><creatorcontrib>HUANG SHENG</creatorcontrib><creatorcontrib>LIU YONGFENG</creatorcontrib><creatorcontrib>ZHANG BINGJIE</creatorcontrib><title>P-type heat treatment method of tellurium-cadmium-mercury material</title><description>The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried out on the tellurium-cadmium-mercury material obtained through epitaxial growth, the time of mercury-rich heat treatment is determined according to the thickness of the tellurium-cadmium-mercury material, and the temperature of heat treatment and the temperature and time of vacuum annealing treatment are controlled at the same time; the technical problem that the electrical parameters of the mercury-cadmium-telluride P-type material after mercury-rich heat treatment are unstable can be solved, meanwhile, the carrier concentration of the mercury-cadmium-telluride P-type material at the liquid nitrogen temperature can be accurately controlled within a certain temperature range, good batch stability is achieved, the yie</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAK0C2pLEhVyEhNLFEoKQKSual5JQq5qSUZ-SkK-WkKJak5OaVFmaW5usmJKbkgOje1KLm0qFIhN7EktSgzMYeHgTUtMac4lRdKczMourmGOHvophbkx6cWFyQmp-allsQ7-xkamhkaGVqYmzgaE6MGAFy6MmU</recordid><startdate>20230516</startdate><enddate>20230516</enddate><creator>YANG CHAOCHEN</creator><creator>HUANG LI</creator><creator>ZHOU WENHONG</creator><creator>HUANG SHENG</creator><creator>LIU YONGFENG</creator><creator>ZHANG BINGJIE</creator><scope>EVB</scope></search><sort><creationdate>20230516</creationdate><title>P-type heat treatment method of tellurium-cadmium-mercury material</title><author>YANG CHAOCHEN ; HUANG LI ; ZHOU WENHONG ; HUANG SHENG ; LIU YONGFENG ; ZHANG BINGJIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116121874A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YANG CHAOCHEN</creatorcontrib><creatorcontrib>HUANG LI</creatorcontrib><creatorcontrib>ZHOU WENHONG</creatorcontrib><creatorcontrib>HUANG SHENG</creatorcontrib><creatorcontrib>LIU YONGFENG</creatorcontrib><creatorcontrib>ZHANG BINGJIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANG CHAOCHEN</au><au>HUANG LI</au><au>ZHOU WENHONG</au><au>HUANG SHENG</au><au>LIU YONGFENG</au><au>ZHANG BINGJIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>P-type heat treatment method of tellurium-cadmium-mercury material</title><date>2023-05-16</date><risdate>2023</risdate><abstract>The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried out on the tellurium-cadmium-mercury material obtained through epitaxial growth, the time of mercury-rich heat treatment is determined according to the thickness of the tellurium-cadmium-mercury material, and the temperature of heat treatment and the temperature and time of vacuum annealing treatment are controlled at the same time; the technical problem that the electrical parameters of the mercury-cadmium-telluride P-type material after mercury-rich heat treatment are unstable can be solved, meanwhile, the carrier concentration of the mercury-cadmium-telluride P-type material at the liquid nitrogen temperature can be accurately controlled within a certain temperature range, good batch stability is achieved, the yie</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN116121874A
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title P-type heat treatment method of tellurium-cadmium-mercury material
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T15%3A45%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YANG%20CHAOCHEN&rft.date=2023-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116121874A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true