P-type heat treatment method of tellurium-cadmium-mercury material

The invention belongs to the technical field of semiconductor material processing and preparation, and particularly relates to a P-type heat treatment process method of a tellurium-cadmium-mercury material. According to the method, mercury-rich heat treatment and vacuum heat treatment are carried out on the tellurium-cadmium-mercury material obtained through epitaxial growth, the time of mercury-rich heat treatment is determined according to the thickness of the tellurium-cadmium-mercury material, and the temperature of heat treatment and the temperature and time of vacuum annealing treatment are controlled at the same time; the technical problem that the electrical parameters of the mercury-cadmium-telluride P-type material after mercury-rich heat treatment are unstable can be solved, meanwhile, the carrier concentration of the mercury-cadmium-telluride P-type material at the liquid nitrogen temperature can be accurately controlled within a certain temperature range, good batch stability is achieved, the yie