Technological method of CMOS (Complementary Metal Oxide Semiconductor) image sensor

The invention discloses a process method of a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The process method comprises the following steps: forming an epitaxial embedded layer on a semiconductor substrate; the forming region of the CMOS image sensor is pre-doped through the process of growing the epitaxial embedded layer, and part of required doped impurities are reserved in advance, so that the injection energy and the injection dosage of subsequent ion injection are reduced. According to the invention, pre-doping is carried out on the pixel region by additionally carrying out N-type EPI growth, and a large amount of N-type impurities are supplemented in advance, so that the structure does not need large-energy and large-dose ion implantation in the subsequent process, thereby reducing the damage of large-energy ion implantation to silicon lattices in the manufacturing process, and remarkably improving the problem of white point defects. 本发明公开了一种CMOS图像传感器的工艺方法，在半导体衬底上形成外延嵌入层；通过生长外延嵌入层的过程对所述C