Semiconductor element structure and preparation method thereof

The invention provides a semiconductor element structure with silicide parts among a plurality of conductive plugs and a preparation method of the semiconductor element structure. The semiconductor device structure has a first dielectric layer disposed on a semiconductor substrate; and a second dielectric layer disposed on the first dielectric layer. The semiconductor device structure also has a first conductive plug disposed in the first dielectric layer; and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure also has a silicide portion disposed between the first conductive plug and the second conductive plug. 本公开提供一种在多个导电栓塞之间具有硅化物部的半导体元件结构及其制备方法。该半导体元件结构具有一第一介电层，设置在一半导体基底上；以及一第二介电层，设置在该第一介电层上。该半导体元件结构亦具有一第一导电栓塞，设置在该第一介电层中；以及一第二导电栓塞，设置在该第二介电层中且直接在该第一导电栓塞上方。该半导体元件结构还具有一硅化物部，设置在该第一导电栓塞与该第二导电栓塞之间。