Semiconductor device, semiconductor module, and wireless communication apparatus

A semiconductor device includes: a channel layer; a spacer layer; an intermediate layer; and a barrier layer. The channel layer includes a first nitride semiconductor. The spacer layer includes a second nitride semiconductor having a band gap larger than a band gap of the first nitride semiconductor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TASAI KUNIHIKO, FUTAGAWA NORIYUKI, FUKUSHIMA TAKASHI, KOYAMA TAKAHIRO, KANITANI YUYA
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!