Semiconductor device, semiconductor module, and wireless communication apparatus

A semiconductor device includes: a channel layer; a spacer layer; an intermediate layer; and a barrier layer. The channel layer includes a first nitride semiconductor. The spacer layer includes a second nitride semiconductor having a band gap larger than a band gap of the first nitride semiconductor. The spacer layer is disposed on the channel layer. The intermediate layer includes Al < x > 1 In < y > 1 Ga (1-x1-y1) N (0 lt; x1lt; 1, 0lt; y < 1lt >; 1 and 0 lt; x1 + y1lt; 1). The intermediate layer is disposed on the spacer layer. The barrier layer includes an Alx2In (1-x2) N (0lt; x2lt; x2lt; 1). The barrier layer is disposed on the intermediate layer. 一种半导体设备，包括：沟道层；间隔层；中间层；以及势垒层。沟道层包括第一氮化物半导体。间隔层包括具有比第一氮化物半导体的带隙大的带隙的第二氮化物半导体。间隔层设置在沟道层上。中间层包括Alx1Iny1Ga(1-x1-y1)N(0