N-type dense gate structure solar cell and preparation method thereof

The invention discloses an N-type dense grid structure solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The solar cell is composed of a cell piece, a front silver gate electrode, a front antireflection film, a P + type emitter, P type silicon, a heavily doped deep emitter P + +, N type silicon, a tunneling oxide layer, N + type amorphous silicon, a back antireflection film and a back silver gate electrode. According to the invention, deep junctions are firstly made on the front surface of the cell piece, then the made deep junctions are made into shallow junctions in a high-temperature internal gettering mode, and the aim of collecting free electrons faster is achieved by reducing the distance between silver grid lines on the back surface of the cell piece. 本发明公开了一种N型密栅结构太阳电池及制备方法，属于太阳电池技术领域。该太阳电池由电池片、正面银栅电极、正面减反射膜、P+型发射极、P型硅、重掺型深发射极P++、N型硅、隧穿氧化层、N+型非晶硅、背面减反射膜、背面银栅电极构成；本发明是将电池片正面先做深结然后通过高温内吸杂的方式将做好的深结制作成浅结，背面通过降低银栅线之间的间距，达到更快的收集自由电子的目的。