Charge trapping type memory prepared by plasma enhanced atomic layer deposition and preparation method thereof

The invention relates to a charge trapping type memory prepared by plasma enhanced atomic layer deposition and a preparation method thereof, and belongs to the technical field of charge trapping type memories. The memory comprises a substrate, a gate electrode, a charge barrier layer, a charge stora...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI ZHIJUN, ZHENG SHUAIYING, CHU GUANGFU, ZHANG JIAWEI, XIN QIAN, LI YUXIANG, DONG LIWEI, SONG AIMIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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