Charge trapping type memory prepared by plasma enhanced atomic layer deposition and preparation method thereof

The invention relates to a charge trapping type memory prepared by plasma enhanced atomic layer deposition and a preparation method thereof, and belongs to the technical field of charge trapping type memories. The memory comprises a substrate, a gate electrode, a charge barrier layer, a charge storage layer, a charge tunneling layer and an indium gallium zinc oxide channel layer which are sequentially arranged from bottom to top, a source electrode and a drain electrode are respectively arranged on the upper side of the indium gallium zinc oxide channel layer at intervals, and the charge barrier layer, the charge storage layer and the charge tunneling layer are made of Al2O3 films. According to the invention, Al2O3 films with different properties are obtained by using plasma enhanced atomic layer deposition through different oxygen sources and different process conditions, and the Al2O3 films are respectively applied to a charge barrier layer, a charge storage layer and a charge tunneling layer of a charge tr