Control of plasma formation through RF coupling structures

The plasma forming device may include one or more coupling ports to receive a radio frequency (RF) current. The apparatus may additionally include one or more coupling structures, which may include one or more conductive loops to allow the RF current to be conducted from at least a first port of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to display a first inductance value in the absence of the plasma and a second inductance value in the presence of the plasma. The one or more coupling structures may each include a reactive element, wherein each reactive element is coupled to a respective one of the one or more conductive loops to form a respective number of coupling structures. Each RF coupling structure may have an increasing resonant frequency in response to the presence of the plasma. 等离子体形成装置可以包括一个或更多个耦合端口以接收射频(RF)电流。该装置可额外包括一个或更多个耦合结构，其可包括一个或更多个导电回路以允许该RF电流从该一个或更多个耦合端口中的至少第一端口传导至该一个或更多个耦合端口中的至少第二端口。该