Memory device and manufacturing method thereof

According to the memory device and the manufacturing method thereof provided by the invention, deposition of a hard mask layer is omitted in a gate etching process, and a hard mask layer deposition process is saved under the condition that the performance of the memory device is not changed by replacing a photoresist type adopted in a gate photoetching process, increasing the thickness of the photoresist and optimizing parameters of the gate etching process, so that the manufacturing cost of the memory device is reduced. The production cost is saved. Furthermore, hard mask layer deposition is omitted in the gate etching process, so that the boundary of the gate in the peripheral circuit region can be overlapped with the boundary of the memory cell region, the STI width around the memory cell array is reduced, the area of the memory cell array is effectively reduced, and the competitiveness of platform products is improved. 本发明提供一种存储器件及其制作方法，在栅极刻蚀工艺中省略硬掩膜层的沉积，并通过更换栅极光刻过程中采用的光阻类型，增加光阻的厚度，优化栅极刻蚀工艺的参数，在保证存储器件性能不变