Light emitting diode chip and light emitting device

The invention relates to a light-emitting diode chip and a light-emitting device, and the light-emitting diode chip comprises a semiconductor lamination layer which comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from bottom to top; a transparent conductive layer on the semiconductor stack; a transparent bonding layer on the transparent conductive layer; a transparent substrate on the transparent bonding layer; the second semiconductor layer comprises a first sub-layer and a second sub-layer, the second sub-layer is located on a part of the upper surface of the first sub-layer, and the doping concentration of the first sub-layer is lower than that of the second sub-layer; the transparent conductive layer contacts an upper surface of the second sub-layer and an upper surface of the first sub-layer around the second sub-layer. Through the design, the thickness of the semiconductor layer can be reduced, the warping degree, caused by lattice difference, of the wafer