Positive pyramid wet texturing method for surfaces of monocrystalline silicon and polycrystalline silicon

The invention discloses a positive pyramid wet texturing method for monocrystalline silicon and polycrystalline silicon surfaces. The method comprises the following steps: putting a crystal silicon wafer with a clean surface into a container containing a mixed solution of potassium metabisulfite and hydrofluoric acid; reacting at 80 DEG C for 120-140 minutes to corrode a large-area micro-nano positive pyramid suede on the surface of the silicon wafer; and soaking the corroded silicon wafer in a deionized water solution to remove hydrofluoric acid remaining on the surface of the silicon wafer. Different from traditional acidic metal catalytic corrosion, metal ions do not need to be used, a large-area micro-nano positive pyramid array structure can be prepared on the surface of monocrystalline silicon, and the inverted pyramid structure can effectively absorb light rays, so that the light reflection characteristic of a photovoltaic device is improved, the photoelectric conversion efficiency of a solar cell is i