Read level tracking by random threshold shift with short feedback loop

A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to determine a read threshold on a word line, adjust a read threshold voltage level associated with the read threshold, determine an adjusted read threshold at the adjusted read threshold voltage level, where the adjusted read threshold is different from the read threshold, compare the adjusted read threshold to the read threshold, and determine a read threshold at the adjusted read threshold voltage level, where the adjusted read threshold is different from the read threshold. And calibrating the read threshold based on the comparison. The controller is further configured to analyze a bit error rate (BER) difference based on the calibration and/or a previous read threshold voltage level shift, select a next target read threshold for a next calibration, and read a second page at the next target read threshold. 一种数据存储设备包括存储器设备以及耦接到该存储器设备的控制器。该控制器被配置成确定字线上的读取阈值，调整与该读取阈值相关联的读取阈值电压电平，在该已调整的读取