Substrate processing apparatus

A vertical furnace and a method for forming a semiconductor structure including a film are provided. In a preferred embodiment, the vertical furnace includes an inner housing defining a processing space and an opening. The processing space extends in a vertical direction, and the opening is used for receiving a plurality of wafers. The vertical furnace includes an outer shell surrounding an inner shell. Further, it comprises a gas injector for injecting a process gas into the process space. The device further comprises a waste gas outlet used for discharging the treatment space. The vertical furnace is provided with a lamp for heating a plurality of wafers. The lamp is circumferentially disposed in an interior space between the inner housing and the outer housing. The vertical furnace also includes a cooling inlet for providing a cooling fluid to the interior space to cool the interior space. 提供了用于形成包括膜的半导体结构的立式炉和方法。在优选实施例中，该立式炉包括限定处理空间和开口的内壳。该处理空间在竖直方向上延伸，并且开口用于接收多个晶片。该立式炉包括包围内壳的外壳。此外，它包括用于将处理气体注入处理空间的气体注射器。