Integrated assembly and method of forming integrated assembly

Some embodiments include an integrated assembly having a first level. The first level has a first memory cell level alternating with a first insulation level. A second level is over the first level. The second level has a second memory cell level alternating with a second insulation level. A column of unit material passes through the first level and the second level. A memory cell is along the first memory cell level and the second memory cell level and includes a region of the pillar of cell material. An intermediate level is between the first level and the second level. The intermediate level includes a buffer adjacent to the column of cell material. The buffer region includes a composition different from the first insulating material and the second insulating material and different from the first conductive region and the second conductive region. Some embodiments include methods of forming an integrated assembly. 一些实施例包含一种具有第一层面的集成组合件。所述第一层面具有与第一绝缘层级交替的第一存储器单元层级。第二层面在所述第一层面上方。所述第二层面具有与第二绝缘层级交替的第二存储器单元层级。单