Photoresist underlayer composition and method for forming pattern using same

The present invention relates to a photoresist underlayer composition and a method for forming a pattern using the same, the photoresist underlayer composition comprising a polymer having a ring skeleton containing two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, a...

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Bibliographische Detailangaben
Hauptverfasser:	PARK HYUN, CHEON MIN-KI, SONG DAE-SEOK, GWON SOON-HYUNG, BAEK JAE-YEOL, JIN HWA-YOUNG, CHOI YOO-JEONG, BAE SHIN-HYO, KIM MIN-SOO, KIM SUNG-JIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a photoresist underlayer composition and a method for forming a pattern using the same, the photoresist underlayer composition comprising a polymer having a ring skeleton containing two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, and a solvent. The chemical formula 1 is defined in the specification. [Chemical Formula 1] 本发明有关于一种光阻底层组成物以及使用所述光阻底层组成物形成图案的方法，所述光阻底层组成物包括：具有在环中包含两个或更多个氮原子的环骨架的聚合物、由化学式1表示的化合物及溶剂。化学式1的定义如说明书中所述。[化学式1]