Transistor and semiconductor device

The embodiment of the invention provides a transistor and a semiconductor device. The transistor comprises a plurality of source electrode active regions and a plurality of drain electrode active regions which are formed in a substrate, are arranged along a first direction and extend along a second direction, and the source electrode active regions and the drain electrode active regions are arranged at intervals; the grid electrodes are located on the surface of one side, close to the source electrode active regions, of the substrate, are arranged in the first direction, extend in the second direction and are arranged between the source electrode active regions and the drain electrode active regions which are adjacent to each other; the drain electrode contact region is positioned on one side, far away from the substrate, of the drain electrode active region and comprises a plurality of drain electrode contact units which are arranged along a second direction; the source electrode contact region is located on