IGBT chip

The invention provides an IGBT (Insulated Gate Bipolar Translator) chip, which solves the problem that when the current is large, the current shared by each bonding point on the chip is increased, so that very high energy accumulation exists near the bonding points in the switching process, local temperature rise is increased, and latch failure is caused. The IGBT chip provided by one embodiment of the invention comprises a bonding point which is located on the surface of one side of the IGBT chip; the IGBT chip comprises a first cellular structure and a second cellular structure; the position of the second cellular structure corresponds to the position of the bonding point; the second cellular structures are distributed on one side of the bonding points in a strip shape; the structures of the first cellular structure and the second cellular structure are different. 本发明提供了一种IGBT芯片，解决了当电流大时，芯片上每个键合点分担的电流增大，导致键合点附近在开关过程中有很高的能量积累，引起局部温升增加，从而引发闩锁失效的问题。本发明一实施例提供的一种IGBT芯片，包括：键合点，位于所述IGBT芯片的一侧表面；所述IGBT芯片包括第一元胞结构和第二元