Method for reducing silicon carbide ion implantation damage

The invention discloses a method for reducing silicon carbide ion implantation damage, which comprises the following steps of: S1, depositing a layer of high-temperature-resistant material film on a silicon carbide substrate, and coating a layer of photoresist on the film; s2, obtaining a required pattern through exposure and development, taking the photoresist as a mask, and transferring the pattern to the high-temperature-resistant material film through plasma etching; s3, removing the residual photoresist, and performing high-temperature ion implantation by taking the etched high-temperature-resistant material film as an implantation mask; s4, the etched high-temperature-resistant material film is removed, impurities on the surface of the silicon carbide are removed, and plasma etching is conducted on the surface of the silicon carbide; and S5, cleaning and annealing the etched silicon carbide surface to obtain the silicon carbide device. By utilizing the characteristic that the plasma corrodes the high-te