Preparation method and application of metal In-doped ZnO quantum dot sensor

The invention discloses a preparation method and application of a metal In-doped ZnO quantum dot sensor, and relates to the technical field of ethylene detection.The preparation method comprises the steps that metal In-doped ZnO quantum dots are dropped on a Pt electrode, dried and annealed, and the metal In-doped ZnO quantum dot sensor is obtained and used for ethylene gas detection. Due to doping of In, a smaller crystal size, a lower crystallinity, a larger light band gap and a larger surface area are caused, changes of an oxidation state and an electronic state are caused, and more reaction sites for detecting ethylene are achieved, so that the sensitivity of the gas sensor is greatly enhanced. 本发明公开了一种金属In掺杂的ZnO量子点传感器的制备方法及应用，涉及乙烯检测技术领域，制备方法为将金属In掺杂的ZnO量子点滴在Pt电极上，干燥，退火，得到金属In掺杂的ZnO量子点传感器，用于乙烯气体检测，由于In的掺杂导致了更小的晶体尺寸和更低的结晶度，更大的光带间隙和更大的表面积，并引起了氧化态和电子态的改变，具有更多的检测乙烯的反应位点，从而极大的增强了气敏传感器的灵敏度。