Radical activated carbon film deposition

A crystalline or amorphous carbon film is deposited on a substrate using a radically activated carbon-containing precursor. The carbon-containing precursor comprises one or more C-C bonds and/or one or more C-H bonds. The radicals are generated in a remote plasma source upstream of the reaction chamber, and the carbon-containing precursor flows into the reaction chamber downstream of the remote plasma source. The free radicals interact with C-C and/or C-H bonds to activate the carbonaceous precursor in an environment adjacent to the substrate. In some embodiments, a highly conformal amorphous carbon film is deposited by a precursor containing radical activated carbon. 使用含自由基活化碳的前体将结晶或非晶碳膜沉积在衬底上。含碳前体包含一或多个C-C键和/或一或多个C-H键。自由基在位于反应腔室上游的远程等离子体源中产生，且含碳前体流动到远程等离子体源下游的反应腔室中。自由基与C-C键和/或C-H键相互作用以在邻近于衬底的环境中活化含碳前体。在一些实施方案中，高度保形的非晶碳膜通过含自由基活化碳的前体沉积。