SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention provides a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes: a gate stack including a plurality of first interlayer insulating patterns and a plurality of conductive patterns alternately stacked; a dummy laminate including a plurality of second interlayer insulating patterns and a plurality of sacrificial insulating layers; a plurality of stepped grooves defined at different depths in the gate stack; a plurality of openings passing through the dummy stack and spaced apart from each other; a first gap filling insulating pattern filling the plurality of stepped grooves; a second gap filling insulating pattern filling the plurality of openings; a plurality of conductive gate contacts filling the insulating pattern through the first gap and connected to the plurality of conductive patterns; and a plurality of conductive peripheral circuit contacts filling the insulating pattern through the second gap. 提供了半导体存储器装置及制造半导体存储器装置的方法。该半导体存储器装置包括：栅