Microelectronic devices including conductive structures, and related memory devices, electronic systems, and methods

A microelectronic device includes: a stacked structure including alternating conductive structures and insulating structures arranged in layers, each of the layers including conductive structures and insulating structures, respectively; a string of memory cells extending vertically through the stack structure, the string of memory cells including a channel material extending vertically through the stack structure; and another stacked structure vertically overlying the stacked structure and including other layers of alternating levels of other conductive structures and other insulating structures, the other conductive structures exhibiting a conductivity greater than a conductivity of the conductive structures of the stacked structure. Related memory devices, electronic systems, and methods are also described. 一种微电子装置包括：堆叠结构，其包括布置成层的交替的导电结构和绝缘结构，所述层中的每一个分别包括导电结构和绝缘结构；存储器单元串，其竖直地延伸穿过所述堆叠结构，所述存储器单元串包括竖直地延伸穿过所述堆叠结构的沟道材料；以及另一堆叠结构，其竖直上覆于所述堆叠结构且包括其它导电结构和其它绝缘结构的交替层级的其它层，所述其它导电结构展现比所述堆叠结构的所述导电结构的导电性更大的导电性。还描述了相关存储器装置、