Semiconductor laser and manufacturing method thereof

The invention relates to the technical field of semiconductor lasers, and provides a manufacturing method of a semiconductor laser, which comprises the following steps: S1, preparing an epitaxial structure which comprises a P-type DBR (Distributed Bragg Reflector) with a highly-doped layer, S2, etching the annular P-type DBR on the surface of the epitaxial structure until the highly-doped layer is etched, S3, manufacturing a P-type contact electrode on the highly-doped layer, and S4, manufacturing a P-type contact electrode on the highly-doped layer. The method comprises the following steps: S1, preparing a P-type contact electrode, and processing the P-type contact electrode, S4, preparing an N-type electrode, and processing the N-type contact electrode, and S5, cutting the chip. The invention further provides a semiconductor laser, the semiconductor laser comprises the N-type DBR, the active region, the oxide layer and the P-type DBR which are sequentially grown on the substrate, the P-type DBR is etched to