Technological method of CMOS (Complementary Metal Oxide Semiconductor) image sensor

The invention discloses a process method of a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The process method comprises the following steps: forming an oxide layer on a semiconductor substrate; etching and filling to form STI (Shallow Trench Isolation), and marking out an active region; carrying out first high-energy particle injection on the pixel region after photoetching, etching and patterning to form a first well region; removing the photoresist, and carrying out rapid thermal annealing and activation processes; second ion implantation is carried out, and second well region implantation of the pixel region is completed; and performing third ion implantation to complete third well region implantation of the pixel region. By adjusting the process sequence and adding the heat treatment process after the first time of ion implantation, the ion activation rate after the first time of ion implantation can be improved through rapid thermal annealing, lattice damage can be fully repaired through